IEEE

Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology

Abstract: In this article, a doped fully depleted silicon on insulator (FDSOI) behavior for the 65-nm partially depleted silicon on insulator (PDSOI) technology is demonstrated to understand the ...

Non-children's hospitals more commonly use imaging exposing children to ionizing radiation

Imaging modalities that expose children to ionizing radiation are used more frequently at non-children's hospitals compared ...
IEEE

Total-Ionizing-Dose and Displacement Damage Effects in Trench SiC Power MOSFETs

Abstract: This study explores the total-ionizing-dose (TID) and displacement damage (DD) effects in trench silicon carbide (SiC) power MOSFETs. The effects of X-ray irradiation reveal significant ...