Imec has presented a 300mm-wafer platform for MOSFET devices with 2D materials. 2D materials could provide the path towards extreme device-dimension scaling as they are atomically precise and suffer ...
A new technique opens a possibility to replace silicon with 2D materials in semiconducting technology. A prerequisite of building ultra-large-scale high-performance semiconducting circuits is that the ...
Figure 2. Spatial distribution of magnetic vortex lattice and absence of Majorana bound state in vortex core of WS2 with stripes. Figure 3. Recovered Majorana bound states in the underlying WS2 layer ...
A new technical paper titled “Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors” was published by researchers at Chalmers University of Technology. “Semiconducting transition metal ...
A new technical paper titled “Enhancing Cu-barrier properties of 2D-WS2 barriers: The role of grain size and surface passivation” was published by researchers at National University of Singapore, ...
As silicon based semiconducting technology is approaching the limit of its performance, new materials that may replace or partially replace silicon in technology is highly desired. Recently, the ...