BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices. Traditional memory devices are volatile and the current ...
BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices.
(Nanowerk News) Researchers from the Helmholtz-Zentrum Dresden-Rossendorf (HZDR), TU Chemnitz, TU Dresden and Forschungszentrum Jülich have been the first to demonstrate that not just individual bits, ...
(Nanowerk News) Traditional memory devices are volatile and the current non-volatile ones rely on either ferromagnetic or ferroelectric materials for data storage. In ferromagnetic devices, data is ...
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