A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental ...

For a power system designer who has worked with a power MOSFET, upgrading to an enhancement mode GaN transistor is straightforward. The basic operating characteristics are quite similar and yet there ...

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and ...

This video explains how MOSFETs work and why they are critical in modern electronics. MOSFETs are high-speed, efficient transistors used to switch and control electrical power in phones, computers, ...

A next-generation gallium-nitride process significantly improves the performance and shrinks the size of medium-power FETs. When a new power device improves on its predecessor in some parameter by 50% ...

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.