A simple one-step process that produces both n-type and p-type doping of large-area graphene surfaces could facilitate use of the promising material for future electronic devices. The doping technique ...

A South Korean research team has, for the first time, uncovered the molecular-level mechanism by which trace amounts of impurities—known as dopants—can reverse charge polarity in organic polymer ...

Semiconductor technology is the foundation of modern electronics, enabling the development of devices such as transistors, integrated circuits, and microprocessors. It involves the use of ...

A research team has shown how n-type and p-type copper nitride semiconductors could potentially replace the conventional toxic or rare materials in photovoltaic cells. A Tokyo Institute of Technology ...

An international research team comprising scientists from Chinese module manufacturer Longi has investigated the resistivity distribution of antimony- and phosphorous-doped wafers used in solar cell ...

A popular 2D active material, molybdenum disulfide (MoS 2), just got a platinum upgrade at an atomic level. A study led by researchers from the University of Vienna and Vienna University of Technology ...

Scientists at Germany’s Fraunhofer Institute for Solar Energy Systems (ISE) have investigated gallium-doping in p-type silicon wafers as a route to better performance. Testing these specially produced ...

The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities. Doping with isovalent and larger-sized alkali ...

Formed at the boundary between an N-type and P-type semiconductor is a P-N Junction which is created by doping a single crystal of semiconductor. The nature of the P-N junction is one of the crucial ...